TY - JOUR AU - Wafa HADJ KOUIDER AU - Abbas BELFAR AU - Mohammed BELMEKKI AU - Hocine AIT-KACI PY - 2020/06/15 Y2 - 2024/03/28 TI - Window Layer Thickness Effect on Amorphous Silicon Oxide Solar Cell Performances JF - Algerian Journal of Renewable Energy and Sustainable Development JA - AJRESD VL - 2 IS - 01 SE - Articles DO - UR - https://ajresd.univ-adrar.edu.dz/index.php?journal=AJRESD&page=article&op=view&path[]=67 AB - The recent research and developments of a-Si:H based solar cells have greatly promoted its position as low cost solar cell. Unfortunately, a-Si:H solar cells suffer appreciable light induced degradation for thickness greater than 200nm. It has been reported that boron doped hydrogenated amorphous silicon oxide (p-a-SiOx:H) films have a low temperature coefficient compared to those based on hydrogenated amorphous silicon (p-a-Si:H) . Moreover, the solar cells with a p-a-SiOx: H generate more electricity than the solar cells with p-a-Si: H window layer due to the wider band gap (Eg) of these films. We present in this paper a computer simulation on the effects of window layer thickness on the performances of single junction amorphous silicon oxide solar cells. We varied the thickness of the window layer from 5 nm to 25 nm and our simulation results showed that cells parameters are significantly affected window layer thickness. However, the film thickness of the p-a-SiOx:H window layer increased from 5 nm to 25 nm, the power conversion efficiency (PCE) of the solar cells respectively decreased in the ranges of 5.733% to 5.271% .the simulation data are in good agreement with the literature ER -